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  note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: R00017E doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / s6189f __ __ __ screening 3 / __ = not screened tx = tx level txv = txv s = s level package c = ministud v = isolated ministud voltage 6 = 600v 8 = 800v 10 = 1000v s6189f6 thru s6189f10 9 amp fast recovery rectifier 600 - 1000 volts features : ? fast recovery: 250 nsec maximum ? piv to 1000 volts ? low reverse leakage current ? hermetically sealed ministud packages ? single chip construction ? high surge rating ? low thermal resistance ? tx, txv, and space level screening available ? available in ultrafast and hyperfast versions maximum ratings 2 / symbol value units peak repetitive reverse voltage and dc blocking voltage s6189f6c, v s6189f8c, v s6189f10c, v v rrm v rwm v r 600 800 1000 volts average rectified forward current (resistive load, 60 hz, sine wave, t c 100c) i o 9 amps peak surge current (8.3 ms pulse, half sine wave, t c 100c) i fsm 125 amps operating & storage temperature t op & t stg -65 to +175 c maximum thermal resistance (junction to case) ?v? isolated ?c? hot case r jc 7.5 4.5 c/w notes: 1/ for ordering information, pr ice, operating curves , and availability - contact factory. 2/ unless otherwise specified, all electrical characteristics @ 25c 3/ screening based on mil-prf-19500. screening flows available on request. ministud (c) isolated ministud (v)
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: R00017E doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com s6189f6 thru s6189f10 electrical characteristics symbol max units instantaneous forward voltage drop (i f = 9 adc, t a = 25c, 300 s pulse) v f 1.2 v dc instantaneous forward voltage drop (i f = 9 adc, t a = -55 c, 300 s pulse) v f 1.3 v dc reverse leakage current (rated v r , t a = 25c, 300 s minimum pulse) i r 10 a reverse leakage current (rated v r , t a = 100c, 300 s minimum pulse) i r 50 a junction capacitance (v r = 10 v dc , t a = 25c, f = 1 mhz) c j 50 pf reverse recovery time (i f = 500 ma, i r = 1 a, i rr = 250 ma, t a = 25c) t rr 250 nsec case outline: ministud (c) case outline: isolated ministud (v)


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